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1 MRF9045r1 MRF9045sr1 motorola rf device data the rf subCmicron mosfet line nCchannel enhancementCmode lateral mosfets designed f or broadband commercial and industrial applications with frequen- cies up to 1.0 ghz. the high gain and broadband performance of these devices make them ideal for largeCsignal, commonCsource amplifier applications in 28 volt base station equipment. ? typical twoCtone performance at 945 mhz, 28 volts output power 45 watts pep power gain 18.8 db efficiency 42% imd C32 dbc ? integrated esd protection ? designed for maximum gain and insertion phase flatness ? capable of handling 10:1 vswr, @ 28 vdc, 945 mhz, 45 watts cw output power ? excellent thermal stability ? characterized with series equivalent largeCsignal impedance parameters ? in tape and reel. r1 suffix = 500 units per 32 mm, 13 inch reel. maximum ratings rating symbol value unit drainCsource voltage v dss 65 vdc gateCsource voltage v gs C0.5, +15 vdc total device dissipation @ t c = 25 c MRF9045r1 derate above 25 c p d 125 0.71 watts w/ c total device dissipation @ t c = 25 c MRF9045sr1 derate above 25 c p d 175 1 watts w/ c storage temperature range t stg C65 to +200 c operating junction temperature t j 200 c esd protection characteristics test conditions class human body model 1 (minimum) machine model m1 (minimum) thermal characteristics characteristic symbol max unit thermal resistance, junction to case MRF9045r1 MRF9045sr1 r jc 1.4 1.0 c/w note C caution C mos devices are susceptible to damage from electrostatic charge. reasonable precautions in handling and packaging mos devices should be observed. order this document by MRF9045/d semiconductor technical data 945 mhz, 45 w, 28 v lateral nCchannel broadband rf power mosfets case 360bC05, style 1 niC360 MRF9045r1 case 360cC05, style 1 niC360s MRF9045sr1 ? motorola, inc. 2002 rev 6
MRF9045r1 MRF9045sr1 2 motorola rf device data electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics zero gate voltage drain leakage current (v ds = 65 vdc, v gs = 0 vdc) i dss 10 adc zero gate voltage drain leakage current (v ds = 28 vdc, v gs = 0 vdc) i dss 1 adc gateCsource leakage current (v gs = 5 vdc, v ds = 0 vdc) i gss 1 adc on characteristics gate threshold voltage (v ds = 10 vdc, i d = 150 adc) v gs(th) 2 3 4 vdc gate quiescent voltage (v ds = 28 vdc, i d = 350 madc) v gs(q) 3.7 vdc drainCsource onCvoltage (v gs = 10 vdc, i d = 1 adc) v ds(on) 0.19 0.4 vdc forward transconductance (v ds = 10 vdc, i d = 3 adc) g fs 4 s dynamic characteristics input capacitance (v ds = 28 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c iss 69 pf output capacitance (v ds = 28 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c oss 37 pf reverse transfer capacitance (v ds = 28 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c rss 1.5 pf (continued)
3 MRF9045r1 MRF9045sr1 motorola rf device data electrical characteristics continued (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit functional tests (in motorola test fixture, 50 ohm system) twoCtone commonCsource amplifier power gain (v dd = 28 vdc, p out = 45 w pep, i dq = 350 ma, f1 = 945.0 mhz, f2 = 945.1 mhz) g ps 17 18.8 db twoCtone drain efficiency (v dd = 28 vdc, p out = 45 w pep, i dq = 350 ma, f1 = 945.0 mhz, f2 = 945.1 mhz) 38 42 % 3rd order intermodulation distortion (v dd = 28 vdc, p out = 45 w pep, i dq = 350 ma, f1 = 945.0 mhz, f2 = 945.1 mhz) imd C32 C28 dbc input return loss (v dd = 28 vdc, p out = 45 w pep, i dq = 350 ma, f1 = 945.0 mhz, f2 = 945.1 mhz) irl C14 C9 db twoCtone commonCsource amplifier power gain (v dd = 28 vdc, p out = 45 w pep, i dq = 350 ma, f1 = 930.0 mhz, f2 = 930.1 mhz and f1 = 960.0 mhz, f2 = 960.1 mhz) g ps 18.5 db twoCtone drain efficiency (v dd = 28 vdc, p out = 45 w pep, i dq = 350 ma, f1 = 930.0 mhz, f2 = 930.1 mhz and f1 = 960.0 mhz, f2 = 960.1 mhz) 41 % 3rd order intermodulation distortion (v dd = 28 vdc, p out = 45 w pep, i dq = 350 ma, f1 = 930.0 mhz, f2 = 930.1 mhz and f1 = 960.0 mhz, f2 = 960.1 mhz) imd C33 dbc input return loss (v dd = 28 vdc, p out = 45 w pep, i dq = 350 ma, f1 = 930.0 mhz, f2 = 930.1 mhz and f1 = 960.0 mhz, f2 = 960.1 mhz) irl 13 db power output, 1 db compression point (v dd = 28 vdc, p out = 45 w cw, i dq = 350 ma, f1 = 945.0 mhz) p 1db 55 w commonCsource amplifier power gain (v dd = 28 vdc, p out = 45 w cw, i dq = 350 ma, f1 = 945.0 mhz) g ps 18 db drain efficiency (v dd = 28 vdc, p out = 45 w cw, i dq = 350 ma, f1 = 945.0 mhz) 60 % output mismatch stress (v dd = 28 vdc, p out = 45 w cw, i dq = 350 ma, f = 945.0 mhz, vswr = 10:1, all phase angles at frequency of tests) no degradation in output power
MRF9045r1 MRF9045sr1 4 motorola rf device data figure 1. 930 C 960 mhz broadband test circuit schematic z4 0.360 x 0.320 microstrip z5 0.240 x 0.320 x 0.620 , taper z6 0.140 x 0.620 microstrip z7 0.510 x 0.620 microstrip z8 0.330 x 0.320 microstrip z9 0.140 x 0.320 microstrip z10 0.070 x 0.080 microstrip z11 0.240 x 0.080 microstrip z12 0.140 x 0.080 microstrip z13 0.930 x 0.080 microstrip z14 0.180 x 0.080 microstrip z15 0.350 x 0.080 microstrip printed circuit 0.03 glass teflon ? , r = 2.55 board arlon gxC0300C55C22 b1 short ferrite bead surface mount b2 long ferrite bead surface mount c1, c7, c13, c14 47 pf chip capacitors, b case c2, c3, c11 0.8C8.0 pf gigatrim variable trim capacitors c4, c5, c8, c9 10 pf chip capacitors, b case c6, c15, c16 10 f, 35 v tantalum surface mount chip capacitors c10 2.2 pf chip capacitor, b case c12 0.7 pf chip capacitor, b case C MRF9045s 1.3 pf chip capacitor, b case C MRF9045 c17 220 f, 50 v electrolytic capacitor l1, l2 12.5 nh surface mount inductors, coilcraft z1 0.260 x 0.080 microstrip z2 0.610 x 0.120 microstrip z3 0.260 x 0.320 microstrip
5 MRF9045r1 MRF9045sr1 motorola rf device data figure 2. 930 C 960 mhz broadband test circuit component layout cut out area 900 mhz MRF9045
MRF9045r1 MRF9045sr1 6 motorola rf device data typical characteristics figure 3. class ab broadband circuit performance figure 4. power gain versus output power figure 5. intermodulation distortion versus output power figure 6. intermodulation distortion products versus output power figure 7. power gain, efficiency versus output power
7 MRF9045r1 MRF9045sr1 motorola rf device data figure 8. series equivalent input and output impedance f mhz z in ? z ol * ? 930 945 960 1.02 + j0.06 1.15 + j0.25 1.10 + j0.11 2.6 + j0.20 2.6 + j0.16 2.6 + j0.10 z in = complex conjugate of source impedance. z ol * = complex conjugate of the optimum load impedance at a given output power, voltage, imd, bias current and frequency. ?
MRF9045r1 MRF9045sr1 8 motorola rf device data notes
9 MRF9045r1 MRF9045sr1 motorola rf device data notes
MRF9045r1 MRF9045sr1 10 motorola rf device data notes
11 MRF9045r1 MRF9045sr1 motorola rf device data package dimensions case 360bC05 issue f niC360 MRF9045r1 g e c

q 2x d 2x k 2x b b (flange) h f a m (insulator) a t n (lid) r (lid) s (insulator) case 360cC05 issue d niC360s MRF9045sr1
e c
h f r (lid) s (insulator) d 2x b b (flange) m (insulator) t n (lid) a (flange) a k 2x pin 3
MRF9045r1 MRF9045sr1 12 motorola rf device data motorola reserves the right to make changes without further notice to any products herein. motorola makes no warranty, represe ntation or guarantee regarding the suitability of its products for any particular purpose, nor does motorola assume any liability arising out of the applicati on or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. typical parameters which may be provided in motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operatin g parameters, including t ypicals must be validated for each customer application by customers technical experts. motorola does not convey any license under it s patent rights nor the rights of others. motorola products are not designed, intended, or authorized for use as components in systems intended for surgical imp lant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the motorola product could create a s ituation where personal injury or death may occur. should buyer purchase or use motorola products for any such unintended or unauthorized application, buyer shall indemnify and hold motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expens es, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized u se, even if such claim alleges that motorola was negligent regarding the design or manufacture of the part. motorola, inc. motorola, inc. is an equal opportunity/a ffirmative action employer. motorola and the logo are registered in the us patent & t rademark office. all other product or service names are the property of t heir respective owners. motorola, inc. 2002. how to reach us: usa/europe/locations not listed : motorola literature distribution; p.o. box 5405, denver, colorado 80217. 1C303C675C2140 or 1C800C441C2447 japan : motorola japan ltd.; sps, technical information center, 3C20C1, minamiCaz abu. minatoCku, tokyo 106C8573 japan. 8 1C3C3440C3569 asia/pacific : motorola semiconductors h.k. ltd.; silicon harbour centre, 2 da i king street, tai po industrial estate, tai po, n.t., hong ko ng. 852C26668334 technical information center: 1C800C521C6274 home page : http://www .motorola.com/semiconductors/ MRF9045/d ?

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